? 2007 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c, r gs = 1m 100 v v gsm transient 30 v i d25 t c = 25 c60 a i dm t c = 25 c, pulse width limited by t jm 180 a i a t c = 25 c10 a e as t c = 25 c 500 mj p d t c = 25 c 176 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13/10 nm/lb.in weight to-263 2.5 g to-220 3.0 g trenchmv tm power mosfet n-channel enhancement mode avalanche rated IXTA60N10T ixtp60n10t v dss = 100v i d25 = 60a r ds(on) 18m to-263 (ixta) to-220 (ixtp) g s g = gate d = drain s = source tab = drain (tab) (tab) symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 100 v v gs(th) v ds = v gs , i d = 50 a 2.5 4.5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss 1 a v gs = 0v t j = 150 c 100 a r ds(on) v gs = 10v, i d = 25a, notes 1, 2 14.8 18 m d g ds99647b(08/08) s features z international standard packages z 175c operating temperature z avalanche rated z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc/dc converters and off-line ups z primary switch for 24v and 48v systems z high current switching applications z distributed power architechtures and vrms z electronic valve train systems z high voltage synchronous recifier
ixys reserves the right to change limits, test conditions, and dimensions. IXTA60N10T ixtp60n10t symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 25 42 s c iss 2650 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 335 pf c rss 60 pf t d(on) 27 ns t r 40 ns t d(off) 43 ns t f 37 ns q g(on) 49 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 10a 15 nc q gd 11 nc r thjc 0.85 c/w r thch to-220 0.50 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 60 a i sm repetitive, pulse width limited by t jm 240 a v sd i f = 25a, v gs = 0v, note 1 1.2 v t rr 59 ns i rm 3.8 a q rm 112 nc ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-263 (ixta) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-220 (ixtp) outline notes: 1. pulse test, t 300 s; duty cycle, d 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5mm or less from the package body. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 10a r g = 15 (external) i f = 0.5 ? i s , v gs = 0v -di/dt = 100a/ s v r = 0.5 ? v dss dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029
? 2007 ixys corporation, all rights reserved IXTA60N10T ixtp60n10t fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0.00.10.20.30.40.50.60.70.80.91.01.11.2 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v fig. 2. extended output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 101214161820222426 v ds - volts i d - amperes v gs = 10v 8v 6v 7v 9v fig. 3. output characteristics @ 150oc 0 5 10 15 20 25 30 35 40 45 50 55 60 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 5v 6v fig. 4. r ds(on) normalized to i d = 30a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 60a i d = 30a fig. 5. r ds(on) normalized to i d = 30a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 0 15 30 45 60 75 90 105 120 135 150 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 55 60 65 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTA60N10T ixtp60n10t ixys r ef: t_60n10t(2v)8-07-08-a fig. 7. input admittance 0 10 20 30 40 50 60 70 80 90 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 0 102030405060708090 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 180 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 q g - nanocoulombs v gs - volts v ds = 50v i d = 10a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2007 ixys corporation, all rights reserved ixys r ef: t_60n10t(2v)8-07-08-a IXTA60N10T ixtp60n10t fig. 14. resistive turn-on rise time vs. drain current 25 30 35 40 45 50 55 60 10 12 14 16 18 20 22 24 26 28 30 i d - amperes t r - nanoseconds r g = 15 ? v gs = 10v v ds = 50v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 30 50 70 90 110 130 150 170 15 20 25 30 35 40 45 50 55 r g - ohms t r - nanoseconds 10 20 30 40 50 60 70 80 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 30a i d = 10a 10a < i d < 30a fig. 16. resistive turn-off switching times vs. junction temperature 33 34 35 36 37 38 39 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 40 44 48 52 56 60 64 t d(off) - nanoseconds t f t d(off) - - - - r g = 15 ? , v gs = 10v v ds = 50v i d = 10a i d = 30a fig. 17. resistive turn-off switching times vs. drain current 32 33 34 35 36 37 38 39 40 10 12 14 16 18 20 22 24 26 28 30 i d - amperes t f - nanoseconds 35 39 43 47 51 55 59 63 67 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 15 ? , v gs = 10v v ds = 50v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 25 30 35 40 45 50 55 60 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 15 ? v gs = 10v v ds = 50v i d = 30a i d = 10a fig. 18. resistive turn-off switching times vs. gate resistance 30 40 50 60 70 80 90 100 110 120 15 20 25 30 35 40 45 50 55 r g - ohms t f - nanoseconds 50 65 80 95 110 125 140 155 170 185 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 10a, 30a
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